Profile measurements of thin liquid films using reflectometry

Abstract

Microscope-based reflectometry was used to measure the thickness profile of thin films of n-octane on silicon wafer substrates. Coupled with micro-positioning motorized stages and custom software, two-dimensional profiles of the film thickness from the adsorbed film (∼10 nm) to the intrinsic meniscus (∼1000 nm) were automatically and repeatedly measured. The reflectometer aperture was modified to provide better spatial resolution in areas of high curvature, the transition region, where evaporative flux is at a maximum. This technique will provide data for the validation of both existing and future models of thin film evaporation.