Publication | Closed Access

Room temperature fabricated transparent amorphous indium zinc oxide based thin film transistor using high-κ HfO2 as gate insulator

Materials ScienceRoom TemperatureElectrical EngineeringThin Film TransistorEngineeringOxide ElectronicsOxide SemiconductorsApplied PhysicsGate InsulatorSemiconductor MaterialThin Film Process TechnologyThin FilmsThin Film ProcessingSemiconductor Device