Applied Physics Letters · 1978 · 33 citations · 4 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsPhotonicsSemiconductor DevicesIon ImplantationSilicon MaterialsSilicon PhotonicsAnnealing EffectsEnergy DensityFlash Lamp AnnealingIon Implantation EffectsPost-implantation AnnealingSiliconSilicon AnnealingThermal Annealing
Annealing of boron-implanted silicon by a single 15-μsec pulse from a flash lamp has been observed. The required energy density was 27 J/cm2 incident on the silicon. Electrical activity of boron was comparable to that in thermally annealed samples.
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Laser annealing of boron-implanted silicon
R. T. Young, C. W. White, G. J. Clark et al. · Applied Physics Letters · 1978 · 223 citations
Arsenic diffusion in silicon melted by high-power nanosecond laser pulsing
P. Baeri, S. U. Campisano, G. Fóti et al. · Applied Physics Letters · 1978 · 133 citations