Journal of Applied Physics · 1998 · 13 citations · 11 references
SemiconductorsMaterials ScienceOptical MaterialsIntermixing ProcessGrowth TemperaturePhysicsCrystalline DefectsGroup-iii Flux RatioEngineeringApplied PhysicsGrowth ConditionsOptoelectronic DevicesMolecular Beam EpitaxyEpitaxial GrowthOptoelectronicsCompound SemiconductorMicrostructure
The effect of growth temperature and group-V to group-III flux ratio on the intermixing process in molecular beam epitaxial grown InxGa1−xAs/GaAs multiquantum wells were studied by means of photoluminescence coupled with repetitive thermal anneal experiments. We have shown that, for a wide range of growth conditions (growth temperatures from 565 to 636 °C and flux ratios from 5:1 to 25:1) the interdiffusion is controlled solely by a constant background concentration of vacancies which are probably introduced into the substrate during its manufacture. We have shown that, only growth at very low temperatures (470 °C) will result in appreciable excess vacancies.
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New MBE buffer used to eliminate backgating in GaAs MESFETs
F. W. Smith, A. R. Calawa, C.-L. Chen et al. · IEEE Electron Device Letters · 1988 · 622 citations
Semiconductors, Output Resistance, Electrical Engineering +11