Frequency dependence of the single domain wall switching field in glass-coated microwires

Abstract

The frequency dependence of the switching field in glass-coated FeNiMoB microwires has been studied in the temperature range from 77 to 373 K. Two contributions to the domain wall switching mechanism were recognized: a magnetoelastic contribution coming from the magnetoelastic interaction of the magnetic moments with the stresses, and a relaxation contribution coming from the structural relaxation of the atomic level defects. The structural relaxation results in the unusual increase in the switching field at low frequencies, whereas the increase in the switching field at high frequencies was assigned to the frequency dependence of the magnetoelastic contribution, which obeys the power law Hsw∼f1/3.