Damping and T-Matrix in Dense e-h Plasmas

Abstract

An incoherent approach to the physical mechanisms giving rise to the Mott transition and gain in III–V and II–VI semiconductor media is presented. Dynamical screening and one-particle Green's functions (GF) are handled within a full RPA scheme. The resulting one-particle GF serve as input for a T-matrix calculation in screened ladder approximation taking into account bound and scattering states on an equal footing. The T-matrix is used to improve the one-particle GF as well as the transverse polarization function.