Journal of Physics Condensed Matter · 2004 · 10 citations · 15 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials CharacterizationSurface ScienceThin FilmsCrystal GrowthEpitaxial GrowthSemiconductor SurfacesSemiconductor Thin FilmsThin Film Surface MorphologyThin-film MaterialsEpitaxial Film GrowthPolycrystalline Semiconductor FilmsRoughnessRoughness ParametersSemiconductor CharacterizationSurface GrowthThin Film Surface RoughnessThin-film Growth Mechanisms
Cadmium telluride films were grown on glass substrates using the hot wall epitaxy (HWE) technique. The samples were polycrystalline with a preferential (111) orientation. Scanning electron micrographs reveal a grain size between 0.1 and 0.5 µm. The surface morphology of the samples was studied by measuring the roughness profile using a stylus profiler. The roughness as a function of growth time and scale size were investigated to determine the growth and roughness exponents, β and α, respectively. From the results we can conclude that the growth surface has a self-affine character with a roughness exponent α equal to 0.69 ± 0.03 and almost independent of growth time. The growth exponent β was equal to 0.38 ± 0.06. These values agree with that determined previously for CdTe(111) films grown on GaAs(100).
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A. Lopez‐Otero · Thin Solid Films · 1978 · 420 citations
16.0% Efficient Thin-Film CdS/CdTe Solar Cells
T. Aramoto, S. Kumazawa, Hiroshi Higuchi et al. · Japanese Journal of Applied Physics · 1997 · 256 citations
Properties of narrow gap cadmium-based compounds
M. Henini · III-Vs Review · 1995 · 251 citations