Publication | Closed Access
Interband Magnetoabsorption in InAs and InSb
165
Citations
19
References
1967
Year
Wide-bandgap SemiconductorOptical MaterialsEngineeringMagnetoresistanceSemiconductor NanostructuresIi-vi SemiconductorMagnetismOptical PropertiesQuantum MaterialsEpitaxial GrowthPhysicsConduction-band Effective MassSemiconductor MaterialLight-hole Effective MassCondensed Matter PhysicsApplied PhysicsNonparabolic ConductionOptoelectronicsInterband Magnetoabsorption
Direct interband magneto-optical transitions have been observed in bulk and epitaxial films of InAs with magnetic fields up to 100 kOe. The results are interpreted using a modification of the method of Luttinger and Kohn which includes the effects of nonparabolic conduction and light-hole bands, and warping of the conduction and valence bands. The following band parameters at k=0 are obtained for $T\ensuremath{\sim}20\ifmmode^\circ\else\textdegree\fi{}$K: conduction-band effective mass ${m}_{c}=0.0240{m}_{0}$; light-hole effective mass ${m}_{\mathrm{lh}}=0.026{m}_{0}$; and conduction-band $g$ factor ${g}_{c}=\ensuremath{-}15$. Further experimental results (obtained from magnetoabsorption data) are given for the energy dependence of the conduction-band $g$ factors in InSb and InAs. These are compared with the results computed theoretically.
| Year | Citations | |
|---|---|---|
Page 1
Page 1