Preparation of Bi₄Ti₃O₁₂ Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure

Abstract

Pt/Bi 4 Ti 3 O 12 (001)/Bi 2 SiO 5 (100)/Si(100) structures have been fabricated by the metalorganic chemical vapor deposition (MOCVD) at 500°. Bi 2 SiO 5 film is used as a buffer layer to grow ferroelectric Bi 4 Ti 3 O 12 films because of its relatively high dielectric constant ( ε =30). The memory window has a C - V characteristic of about 0.8 V, and the retention time estimated by the zero-bias capacitance for the Pt/100-nm-Bi 4 Ti 3 O 12 /30-nm-Bi 2 SiO 5 /Si/Al structure is more than 11 days.