Intensity of electron channeling radiation, and occupation lengths in diamond crystals

U. Nething, M. Galemann, H. Genz, M. Höfer, P. Hoffmann-Stascheck, J. Hormes, A. Richter, J.P.F. Sellschop

Physical Review Letters · 1994 · 20 citations · 12 references

Concepts

Abstract

The intensity of channeling radiation from natural diamonds of thicknesses of 13 to 55 \ensuremath{\mu}m has been investigated at electron energies of 5.2 and 9.0 MeV. The intensities scale with electron energy according to ${\ensuremath{\gamma}}^{5/2}$ and vary with the crystal thickness d as (1-${\mathit{e}}^{\mathrm{\ensuremath{-}}\ensuremath{\lambda}\mathit{d}}$), from which the occupation length ${\ensuremath{\lambda}}^{\mathrm{\ensuremath{-}}1}$ of the electronic states in the crystal could be deduced. It amounts to 18 and 29 \ensuremath{\mu}m for 5.2 and 9.0 MeV electrons, respectively. The strongest transition has an intensity of 0.1 photon per ${\mathit{e}}^{\mathrm{\ensuremath{-}}}$ per sr.

References

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