Publication | Open Access
Dependence of the Superconducting Transition Temperature on the Doping Level in Single-Crystalline Diamond Films
203
Citations
19
References
2004
Year
Materials ScienceType Ii SuperconductorsSuperconducting MaterialHigh-tc SuperconductivityEngineeringPhysicsSuperconducting Transition TemperatureCubic Boron NitrideApplied PhysicsSuperconductivityCondensed Matter PhysicsHigh Tc SuperconductorsDoping LevelHomoepitaxial Diamond LayersSingle-crystalline Diamond FilmsBoron Contents
Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (approximately 0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those 001-oriented single-crystalline films is about 5-7 10(20) cm(-3). The H-T phase diagram has been obtained from transport and ac-susceptibility measurements down to 300 mK.
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