Applied Physics Letters · 1986 · 41 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesChemical Vapor DepositionIntegrated OpticsLaser DiodesLaser PhysicsPhotonic Integrated CircuitsSemiconductor LasersChemical EtchingCurrent DensityDevice FabricationDouble Heterostructure DevicesHeterostructure DevicesHeterostructure LasersSelective EtchingThermal Resistance
Continuous-wave (cw) operation at temperature up to 33 °C of an AlGaInP/GaInP mesa stripe laser has been achieved for the first time. The threshold current was 106 mA at 30 °C for a device with a mesa stripe 6 μm wide and 250 μm long. The emission wavelength was 678 nm under cw operation at 20 °C. The wafer, which was grown by atmospheric pressure metalorganic chemical vapor deposition, had a dually stacked cladding structure in addition to a conventional double heterostructure. The mesa structure was formed by selective chemical etching of GaAs/AlGaAs over layers. The effect of the mesa structure on threshold current density, thermal resistance, and other characteristics was examined.
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Masao Ikeda, Yoshifumi Mori, Hiromitsu Sato et al. · Applied Physics Letters · 1985 · 131 citations