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Resonant cavity light emitting diode with an Al<i>x</i>O<i>y</i>/GaAs reflector
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1995
Year
Short Wavelength OpticOptical MaterialsEngineeringOptic DesignResonant Cavity LightSurface-emitting LasersOptical PropertiesBuried AlxoyLight-emitting DiodesOptical SystemsSelective ConversionGraded-reflectivity MirrorsPhotonicsElectrical EngineeringNew Lighting TechnologySolid-state LightingApplied PhysicsOptoelectronicsOptical Devices
A resonant cavity light emitting diode is fabricated which makes use of a Ag mirror/contact and a buried AlxOy/GaAs Bragg reflector. The buried AlxOy is formed by the selective conversion of AlAs. The differential light output efficiency is measured and found to be ∼5.5% when the AlxOy/GaAs reflector is present versus ∼2.5% for a control device without the AlxOy/GaAs mirror. The measured efficiencies are compared with calculations.