ZnO nanorod arrays as an antireflective coating for Cu(In,Ga)Se<sub>2</sub> thin film solar cells

Lorenz Aé, D. Kieven, J. Chen, R. Klenk, T. Rissom, Yang Tang, M. Lux‐Steiner

Progress in Photovoltaics Research and Applications · 2010 · 66 citations · 24 references

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Abstract

Abstract A ZnO nanorod antireflective coating has been prepared on Cu(In,Ga)Se 2 thin film solar cells. This coating leads to a decrease of the weighted global reflectance of the solar cells from 8.6 to 3.5%. It boosts the solar cells short‐circuit current up to 5.7% without significant effect on their open‐circuit voltage and fill factor (FF), which is comparable to a conventional optimized single layer MgF 2 antireflective coating. The ZnO nanorod antireflective coating was electrochemically prepared from an aqueous solution at 80°C. The antireflective capability of ZnO nanorod arrays (ZNAs) may be further improved by optimization of growth conditions and their geometry. Copyright © 2010 John Wiley &amp; Sons, Ltd.

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