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Fast response InP/InGaAsP heterojunction phototransistors
56
Citations
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References
1981
Year
PhotonicsElectrical EngineeringPhotoelectric SensorEngineeringBase TerminalPhotochemistryApplied PhysicsPhotoelectric MeasurementQuantum Photonic DeviceCharge ExtractionOptoelectronicsCompound SemiconductorInp/ingaasp Heterojunction Phototransistors
InP/InGaAsP heterojunction phototransistors with a base terminal have been fabricated, showing hFE, values of up to 2000. These devices allow us to trade gain for speed by charge extraction from the base. At a voltage gain of 8 to 9 a response time of 2 ns is observed.
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