Surface electronic structure of InAs(110)

Abstract

The electronic structure of the InAs(110) cleavage surface has been studied by angle-resolved photoelectron spectroscopy. The bulk band structure has been calculated utilizing the augmented plane-wave method and then the bulk bands have been projected along the lines \ensuremath{\Gamma}\ifmmode\bar\else\textasciimacron\fi{}-X\ifmmode\bar\else\textasciimacron\fi{} and \ensuremath{\Gamma}\ifmmode\bar\else\textasciimacron\fi{}-Y\ifmmode\bar\else\textasciimacron\fi{} of the surface Brillouin zone (SBZ). Three surface-related structures have been found and their initial state versus ${\mathit{k}}_{\mathrm{?}}$ dispersion along the line \ensuremath{\Gamma}\ifmmode\bar\else\textasciimacron\fi{}-X\ifmmode\bar\else\textasciimacron\fi{} and the line \ensuremath{\Gamma}\ifmmode\bar\else\textasciimacron\fi{}-Y\ifmmode\bar\else\textasciimacron\fi{} of the SBZ has been determined. The structures are identified as ${\mathit{A}}_{5}$, ${\mathit{A}}_{4}$, and ${\mathit{A}}_{3}$ along \ensuremath{\Gamma}\ifmmode\bar\else\textasciimacron\fi{}-X\ifmmode\bar\else\textasciimacron\fi{} and as ${\mathit{A}}_{5}$, ${\mathit{A}}_{4}$, and ${\mathit{C}}_{2}$ along \ensuremath{\Gamma}\ifmmode\bar\else\textasciimacron\fi{}-Y\ifmmode\bar\else\textasciimacron\fi{}.