THIN ZIRCONIUM DIOXIDE AND YTTRIUM OXIDE-STABILIZED ZIRCONIUM DIOXIDE FILMS PREPARED BY PLASMA-CVD

Abstract

Thin zirconia (zirconium dioxide) films are deposited by PECVD using as precursors organometallic compounds, metal alkoxides, and metal β-diketonates. The properties of the films depend on the substrate temperature, power density and the nature and partial pressure of the precursor. Thin films of zirconia stabilized with yttria (yttrium oxide) are formed at relatively low deposition temperatures (500°C) using the β-diketones of zirconium and yttrium.