Absorption cross section and signal enhancement in Er-doped Si nanocluster rib-loaded waveguides

Abstract

Pump and probe experiments on Er3+ ions coupled to Si nanoclusters have been performed in rib-loaded waveguides to investigate optical amplification at 1.5μm. Rib-loaded waveguides were obtained by photolithographic and reactive ion etching of Er-doped silica layers containing Si nanoclusters grown by reactive sputtering. Insertion losses measurements in the infrared erbium absorption region allowed to gauge an Er3+ absorption cross section of about 5×10−21cm2 at 1534nm. Signal transmission under optical pumping at 1310nm shows confined carrier absorption of the Si nanoclusters. Amplification experiments at 1535nm evidence two pump power regimes: Losses due to confined carrier absorption in the Si nanoclusters at low pump powers and signal enhancement at high pump powers. For strong optical pumping, signal enhancement of about 1.2dB∕cm was obtained.