Probing the electronic structure of bilayer graphene by Raman scattering

Abstract

The electronic structure of bilayer graphene is investigated from a resonant Raman study of the ${G}^{\ensuremath{'}}$ band using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for bilayer graphene are obtained from the analysis of the dispersive behavior of the Raman features, and reveal the difference of the effective masses of electrons and holes. The splitting of the two TO phonon branches in bilayer graphene is also obtained from the experimental data. Our results have implications for bilayer graphene electronic devices.