A 3.4dB NF k-band LNA in 65nm CMOS technology

Abstract

This paper presents a k-band (18–26.5 GHz) high gain low noise amplifier (LNA) in 65-nm CMOS mixed signal process. The LNA has a peak gain of 20.46 dB at 22.45 GHz and a −3 dB bandwidth of 3.8 GHz. S11 of the chip is better than −11 dB and S22 better than −15 dB across the band. The measured smallest noise figure (NF) is 3.4 dB. The whole chip consumes 11mA current under 1.1V supply voltage and occupies an area of 710 μm × 540 μm.