A Potential Red‐Emitting Phosphor BaGd ₂ (MoO ₄ ) ₄ :Eu ³⁺ for Near‐UV White LED

Abstract

Red‐emitting phosphor BaGd 2− x Eu x (MoO 4 ) 4 has been successfully synthesized by a simple sol–gel method. The process of phosphor formation is characterized by thermogravimetric‐differential thermal analysis and X‐ray diffraction. Field‐emission scanning electronic microscopy is used to characterize the size and the shape of the phosphor particles. Photo‐luminescent property of the phosphor is also performed at the room temperature. The effects of firing temperature and Eu 3+ activator concentration on the photoluminescence (PL) properties are elaborated in detail. PL characterization reveals that the sample with the firing temperature at 800°C and the concentration of Eu 3+ at 0.7 shows the most intense emission, and its intensity is about three times stronger than that of phosphor prepared by solid‐state method with the same composition and firing temperature. The new red‐emitting phosphor shows an intense absorption at 396 nm, which matches well with commercial near‐UV light‐emitting diode (LED) chips, therefore, it is a good candidate of red phosphor used for near‐UV white LEDs.