A Λ‐type neuron model using enhancement‐mode MOSFETs

Abstract

Abstract Recently, research has been actively pursued to implement a neuron, which is the basic unit for building neural networks, in hardware with engineering applications as the objective. Specifically, pulse‐type hardware neuron models, which approximately replicate pulse signals, have been examined as the information transmission stage in the brain. However, a pulse‐type hardware neuron model is a complex circuit and includes inductors. Consequently, there are few practical models. In this paper, we present the Λ‐type neuron model, which is a pulse‐type hardware neuron model built from only enhancement‐mode MOSFETs (E‐MOSFETs), which can be handled in a standard CMOS process, and capacitors, and is useful as a hardware neuron model intended for large‐scale neural networks. First, we show that a Λ‐type negative resistance circuit having a negative resistance that varies over time can be fabricated from E‐MOSFETs, and explain its principle. Next, we show that this negative resistance circuit can be used to fabricate a Λ‐type neuron model from E‐MOSFETs, which can be handled in a standard CMOS process. © 2002 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 86(1): 18–25, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.10020