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Low threshold FS-BH laser on <i>p</i> -InP substrate grown by all-MOCVD

30

Citations

0

References

1992

Year

Abstract

A novel FS-BH laser structure using the selective growth characteristics of MOCVD on crystal facets has been developed. A threshold current as low as 12 mA and output power of 40 mW under CW operation have been achieved in the laser.