On the Shockley–Read–Hall Model: Generation-Recombination in Semiconductors

Abstract

The Shockley–Read–Hall model for generation-recombination of electron-hole pairs in semiconductors based on a quasi-stationary approximation for electrons in a trapped state is generalized to distributed trapped states in the forbidden band and to kinetic transport models for electrons and holes. The quasi-stationary limit is rigorously justified both for the drift-diffusion and for the kinetic model.