Applied Physics Letters · 1986 · 71 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceCrystal GrowthEpitaxial GrowthOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor SurfacesAtomic Layer EpitaxyDecomposition Rate AnalysisDecomposition Rate ModelingHeteroepitaxyMetalorganic Vapor Phase EpitaxyPhotocatalytic DegradationPhotocatalytic OxidationSurface Growth
Crystal growth of GaAs by switched laser metalorganic vapor phase epitaxy (SL MOVPE) is reported. This growth technique is achieved by combining laser MOVPE and atomic layer epitaxy. The growth process in SL MOVPE can be explained by a model which assumes that trimethylgallium adsorbed on the crystal surface is decomposed in a photocatalytic reaction and that the decomposition rate depends on the surface species present on the substrate.
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Atomic layer epitaxy of III-V binary compounds
S. M. Bedair, M. A. Tischler, T. Katsuyama et al. · Applied Physics Letters · 1985 · 146 citations