Control of the Deposition of Silicon Nitride Layers by 2537A Radiation

Abstract

Thin films were deposited on polished Si crystals at low temperatures using the Hg‐photosensitized reaction of and . The deposition rate increases linearly with the light intensity. The experiments showed that destructive interference between multiply reflected beams has a pronounced effect in limiting film thickness to a well‐defined value with a high degree of uniformity over the slice.