Growth mechanisms of <i>in situ</i> TiC in laser melted Ti–Si–C ternary system

Abstract

Laser rapid melting and recrystallization of in situ crystals is an interesting issue in research fields of applied physics and materials science. This letter investigated the growth mechanisms of in situ dendritic TiC from laser melted Ti–Si–C ternary system. The growth of TiC dendritic trunks was kinetically dependent on laser scan speed and was influenced negligibly by laser power. A higher scan speed produced the elongated dendritic trunks. The development of TiC dendritic arms was temperature-dependent. An increase in laser energy density by increasing laser power or decreasing scan speed enhanced the growth of primary and even secondary dendritic arms.