Intrasubband scattering in highly excited semiconductor quantum wells with biaxial strain

Abstract

Intrasubband scattering rates are calculated for electrons and holes at finite temperatures in highly excited semiconductor strained-layer quantum-well structures. Carrier-carrier and carrier-phonon interactions are taken into account on an equal basis within the fully dynamic random-phase approximation for multisubband structures. It will be shown that the strain-induced changes in the valence-band structure exert a significant influence on the scattering rates of the electrons as well as the holes. The screening of carrier-phonon interaction by the electron-hole plasma in the coupled electron-hole-phonon system is discussed and analyzed.