On the Dielectric Constants of A^IB^IIIC Chalcopyrite Semiconductor Compounds

Abstract

Abstract Values of the static, ϵ 0 , and high‐frequency, ϵ ∞ , dielectric constants of I‐III‐VI 2 chalcopyrite compounds are estimated by using an empirical model proposed by Nag for cubic semiconductors, which relates these constants to the average atomic number of its constituent atoms Z av . It is found, as in the cubic semiconductors, that the inverse of both these constants is linearly related to Z av . It is also suggested that ϵ 0 and ϵ ∞ thus obtained should be more reliable than those calculated from the energy gap E g , due to the wide range of values of this parameter reported in some I‐III‐VI 2 chalcopyrite compounds.