Kinetic approach to fatigue phenomenon in ferroelectrics

Abstract

We propose an approach to the explanation of the fatigue effect as an evolution of the switching area during cyclic switching as a result of self-organized domain kinetics due to retardation of bulk screening of the depolarization field. The formation of spatially nonuniform internal bias field during cycling (kinetic imprint effect) slows the domain kinetics in some regions leading to formation of the kinetically frozen domains. Presented fatigue and rejuvenation experimental data measured in sol-gel PbZrxTi1−xO3 thin films are in accordance with the results of computer simulation.