Electrochemical and Solid-State Letters · 2009 · 36 citations · 17 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsNanomaterialsNanotechnologyAmorphous SemiconductorsMemory DevicesOxide SemiconductorsSemiconductor Device MaterialsSemiconductor NanomaterialsThermal Properties Of SemiconductorsAnnealing EffectsAnnealing Temperature EffectsEndurance OptimizationErase CyclingHysteresisMemory Window OptimizationThermal AnnealingThermal Annealing Effects
Gadolinium oxide nanocrystal memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized dot surrounded by amorphous dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The memory exhibits a hysteresis memory window of and NC dot density of more than . In addition, the formation of and charge loss characteristics on annealing temperature were analyzed and optimized at . The data endurance of program and erase cycling for a sufficient memory window was also observed for the nanocrystal memory.
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