Characteristics of Gadolinium Oxide Nanocrystal Memory with Optimized Rapid Thermal Annealing

Abstract

Gadolinium oxide nanocrystal memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized dot surrounded by amorphous dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The memory exhibits a hysteresis memory window of and NC dot density of more than . In addition, the formation of and charge loss characteristics on annealing temperature were analyzed and optimized at . The data endurance of program and erase cycling for a sufficient memory window was also observed for the nanocrystal memory.