Low power negative capacitance FETs for future quantum-well body technology

Abstract

A non-hysteretic NCFET structure using thin quantum well body combines two future trends synergistically. Ultra-thin body is needed to suppress short-channel effects and sub-60mV/decade operation is needed to reduce power consumption drastically. NCFET happens to need ultra-thin body as thin as 0.5nm to achieve 0.3V operation. We used simulation results of thin Si body NCFET to illustrate the possibility of achieving 10pA/µm I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> , 200uA/um Ion with 0.3V supply voltage. Layered semiconductors would be ideal for this future technology.