P‐20: Highly Stable Amorphous Indium Gallium Zinc Oxide Thin‐Film Transistors with N ₂ O Plasma Treatment

Abstract

Abstract Amorphous InGaZnO 4 (a‐IGZO) thin film transistors (TFTs) are promising devices in backplane technology. Since a‐IGZO TFTs are very sensitive to the fabrication processes, they need stable process to keep their initial deposition properties. Herein we improved the stability of a‐IGZO by applying N 2 O plasma. The stability characteristic of a‐IGZO TFT was improved with N 2 O plasma. V th shift was 1.5V for 10,000s under NBTS with illumination which was the best result in the world.