Luminescence and compositional analysis of Y₃Al₅O₁₂:Ce films fabricated by pulsed-laser deposition

Abstract

Y3-xAl5O12: Cex3+ (YAG: Ce3+) thin-films were deposited by a pulsed-laser deposition method on quartz substrates using a solid YAG: Ce target. The films were analyzed by X-ray diffraction, scanning electron microscopy, photoluminescence (PL), and energy dispersive X-ray analysis (EDX). The as-deposited films were amorphous and annealing above 900 °C was required for crystallization. PL spectra of annealed films showed a strong and broad emission band around 570 nm and excitations at 342 and 460 nm, all corresponding to transitions between the 4f1 ground level to the 5d1 excited levels of Ce3+ ion. Chemical analysis of films by EDX resulted in nearly the same information as that of the target illustrating excellent stoichiometry replication of the film from the target being sputtered.