Highly packed InGaAs quantum dots on GaAs(311)B

Abstract

We have fabricated highly packed and ordered In0.4Ga0.6As quantum dots (QDs) array on GaAs(311)B substrate without coalescence of QDs. Reflection high-energy electron diffraction and Auger spectra suggest the inhomogeneous distribution of In and Ga in QD. In concentration near the surface of QD is larger than that of the inside, and the inhomogeneous distribution of In and Ga in QDs prevents QDs from merging.