Theoretical calculations of electron mobility in ternary III-V compounds

Abstract

Theoretical calculations have been made of the electron mobility in several ternary III-V semiconductor systems. The scattering mechanisms included in the analysis are polar-optical-phonon scattering, piezoelectric scattering, alloy scattering, and ionized-impurity scattering. Models are also presented and discussed for the variations of material parameters with alloy composition which are needed in the mobility calculations.