An electrically injected InAs/GaAs quantum-dot photonic crystal microcavity light-emitting diode

Abstract

An electrically injected InAs/GaAs self-organized quantum-dot photonic crystal microcavity light-emitting diode operating at 1.04 μm is demonstrated. Light–current characteristics are obtained for devices with two- and five-defect period cavities with maximum light output of 0.17 μW measured in the surface-normal direction. Near-field images were also obtained for an injection current of 8.35 mA, showing light confinement within a few periods of the photonic crystal defect microcavity.