Low-voltage, high-saturation, optically bistable self-electro-optic effect devices using extremely shallow quantum wells

Abstract

Symmetric self-electro-optic effect devices (S-SEEDs) using extremely shallow GaAs/Al0.04Ga0.96As multiple quantum wells are demonstrated. By exploiting mainly exciton ionization, rather than the usual quantum-confined Stark shift, room-temperature optical bistability is obtained with no applied bias. The extremely shallow symmetric-SEED (symmetric E-SEED) exhibits contrast ratios (CRs)≂3.5, with biasses<5 V, demonstrating system applicability and compatability with electronics. Large system tolerances Δλ≂6 nm and maximum bistability loop width ≂70% are also obtained. Moreover, due to fast carrier escape times, the symmetric E-SEED exhibits useful CRs≳2 even at continuous-wave intensities ≳70 μW/μm2.