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Absolute oscillator strengths for 108 lines of SI I between 163 and 410 nanometers

DOI

32

Citations

0

References

1987

Year

Peter L. Smith, M. C. E. Huber, G. P. Tozzi, H. E. Griesinger, Bartley L. Cardon, Gabriel G. Lombardi
The Astrophysical Journal

Abstract

Measurements of neutral silicon oscillator strengths (f-values) obtained by absorption and emission techniques have been combined using the numerical procedure of Cardon et al. (1979) to produce 108 f-values for the Si I lines between 163 and 410 nm. Beam-foil-lifetime measurements were employed to determine the absolute scale. The present measurements have uncertainties of about 0.07 dex (+ or - 16 percent) at the 1-sigma level of confidence. Good agreement is obtained between the results and previous data. The data also provide upper limits for the f-values of 22 other lines and information on the lifetimes for 36 levels in Si I.