Electrical properties of (Zr,Sn)TiO4 dielectric thin film prepared by pulsed laser deposition

Abstract

We have been successful in obtaining temperature-stable crystallized thin film of (Zr,Sn)TiO4. Preferential (111)-oriented (Zr,Sn)TiO4 thin film was prepared by pulsed laser deposition. Effects of crystallization were elucidated based on a comparison of electric properties of crystallized and amorphous (Zr,Sn)TiO4 film. For crystallized film, the temperature coefficient of capacitance (TCC) was 20 ppm/°C at 3 MHz and the dielectric constant εr=38 in the microwave range of 1–10 GHz. These values are superior to those for amorphous film (TCC=220 ppm/°C, εr=27). The crystallization of this material was found quite effective for improving dielectrical properties. Atomic force microscope images showed the surface morphologies of crystallized and amorphous film of (Zr,Sn)TiO4 to differ.