Experimental study of the band structure of GaP, GaAs, GaSb, InP, InAs, and InSb

Abstract

An experimental study of the band structures of GaP, GaAs, GaSb, InP, InAs, and InSb has been made with use of polarization-dependent angle-resolved photoemission. We describe an analysis of the data which allowed us to do band mapping (E vs ${\mathrm{k}}_{\ensuremath{\perp}}$) among some 30 bands both occupied and unoccupied, distributed in the range from 20 eV above to 8 eV below the valence-band maximum. The measurements were made for the 〈110〉 direction \ensuremath{\Gamma}--K--X along line \ensuremath{\Sigma} in the Brillouin zone. The experiments utilized synchrotron-radiation-induced photoemission in which the polarization of the light and collection angles of the electrons were carefully controlled. We compare the data with calculated band structures and tabulate critical-point energies.