Publication | Closed Access
Improved photoemitters using GaAs and InGaAs
41
Citations
2
References
1968
Year
Optical MaterialsEngineeringOptoelectronic DevicesLuminescence PropertyPhotoelectric SensorLuminous SensitivityPhotodetectorsOptical PropertiesCompound SemiconductorPhotonicsElectrical EngineeringIngaas PhotocathodePhotoluminescencePhysicsOptoelectronic MaterialsPhotoelectric MeasurementSolid-state LightingGaas-cs-o PhotocathodeApplied PhysicsOptoelectronics
A luminous sensitivity of 900 µA/lm in a GaAs-Cs-O photocathode, and a photothreshold of 1.16 eV in an InGaAs photocathode with Cs-O or Cs-H <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O surface layers, are reported.
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