Micro-patterned (Zn,Be)Se/(Zn,Mn)Se resonant tunnelling diodes

Abstract

(Zn,Be)Se/ZnSe resonant tunnelling diodes have been fabricated and characterized. The diodes exhibit resonances with a peak to valley ratio of up to 2.5 at a temperature of 4 K. Different device layouts, including micron sized diodes for quantum dot applications, were examined. When Mn is incorporated in the quantum well of the diode, a giant Zeeman splitting of the resonances can be observed.