Low light level imaging with buried channel charge-coupled devices

Abstract

In a buried-channel charge-coupled device (CCD), trapping effects at the interface states can be eliminated and high transfer efficiencies are thus obtained for a wide range of signal levels. Also, the noise associated with the interface states is eliminated. Therefore, good imaging can be achieved for light exposure levels several orders of magnitude smaller than the saturation level of the device. Experimental results obtained from a 500-element linear imaging device are described showing the potential of the device as a low light level imaging array.