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Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry
252
Citations
20
References
2007
Year
Spin-polarized CarriersSpintronicsElectrical EngineeringMagnetismEngineeringPhysicsElectrical InjectionApplied PhysicsMagnetic ResonanceLateral Transport GeometrySurface ContactsSemiconductor Device FabricationMagnetic Field ModulationMagnetic DeviceMicroelectronicsSilicon On InsulatorMagnetoresistanceSemiconductor Device
We present the electrical injection, detection, and magnetic field modulation of lateral diffusive spin transport through silicon using surface contacts. Fe∕Al2O3 tunnel barrier contacts are used to create and analyze the flow of pure spin current in a silicon transport channel. Nonlocal detection techniques show that the spin current detected after transport through the silicon is sensitive to the relative orientation of the magnetization of the injecting and detecting contacts. Hanle effect measurements demonstrate that the spin current can be modulated by a perpendicular magnetic field, which causes the spin to precess and dephase in the transport channel.
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