Computer calculations of sheet resistance of <i>n</i>- and <i>p</i>-type implantations in silicon

Abstract

Abstract This report describes computer calculations of sheet resistance of ion implanted layers. For Gaussian doping profiles the sheet resistance depends on the surface concentration and electrical conductivity of the implanted impurity and the standard deviation in the projected ion range. Universal curves have been produced from which the sheet resistance of any implanted silicon layer can be derived providing these parameters are known, and assuming that all the implanted atoms contribute to the electrical conductivity.