Photoluminescence and space-charge distribution in a double-barrier diode under operation

Abstract

The low-temperature photoluminescence of a double-barrier diode under operation is studied. Its observation with exciting light above (as well as below) the quantum well absorption edge indicates that the tunneling of holes plays an important role. A new crossed transition identified to occur in the collector spacer layer shows a strong Stark shift with applied bias giving information on the potential distribution in the diode.