Diffusion of indium in silicon inert and oxidizing ambients

Abstract

The diffusion of indium in silicon at 1000 °C has been measured in inert (dry nitrogen) and oxidizing (dry oxygen) ambients. It was found that, similarly to phosphorous, boron, and arsenic, indium experiences significant oxidation-enhanced diffusion. This result indicates that indium, like the other elements mentioned above, diffuses in silicon by a mixed interstitialcy and vacancy mechanism. It was also found that indium, similarly to gallium, segregates readily and diffuses rapidly in thermal silicon dioxide.