Deposition of tin sulfide thin films from tin(iv) thiolate precursors

Abstract

AACVD (aerosol-assisted chemical vapour deposition) using (PhS)4Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 °C the film deposited consists of mainly SnS2 while at 500 °C SnS is the dominant component. The mechanism of decomposition of (PhS)4Sn is discussed and the structure of the precursor presented.