Normal incident InGaAs/GaAs multiple quantum well infrared detector using electron intersubband transitions

Abstract

A normal incident infrared detector has been fabricated using electron intersubband transition in a InGaAs/GaAs quantum well structure. With the light polarized in the plane of the layers (normal incident) a nominally forbidden absorption peak was observed. Such an absorption is most likely a result of spin-flip intersubband transitions induced by the spin-orbit coupling. In addition, for the light polarized in the plane of incidence, the usual intersubband absorption due to envelope function transition is observed. The responsivity of 0.2 A/W was obtained for the normal incident infrared on the detector. This work demonstrates the fabrication of high sensitivity quantum well infrared detectors operating in the normal incident mode without fabricating grating structures on the device for focal plane applications.